IXFZ520N075T2
RoHS 
RoHS compliant
RoHS compliantPackage DE475
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 75V 465A DE-475
PDF
/
Buying Options
Total Price: USD $82
Unit Price: USD $82.002421
≥1 USD $82.002421
≥200 USD $32.720094
≥500 USD $31.626448
≥1000 USD $31.085533
Inventory: 1126
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DE475
Number of Pins 475
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series GigaMOS?, TrenchT2?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 6
JESD-30 Code R-PDFP-F6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 600W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 41000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 465A Tc
Gate Charge (Qg) (Max) @ Vgs 545nC @ 10V
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 465A
Drain-source On Resistance-Max 0.0013Ohm
Pulsed Drain Current-Max (IDM) 1560A
DS Breakdown Voltage-Min 75V
Avalanche Energy Rating (Eas) 3000 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
IXFZ520N075T2+price,IXFZ520N075T2+datasheet,IXFZ520N075T2+in stock,buy+IXFZ520N075T2,finder+IXFZ520N075T2,IXFZ520N075T2+tutorials,IXFZ520N075T2+download