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IXFX90N30

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 300V 90A PLUS247
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Buying Options
Total Price: USD $136.87
Unit Price: USD $136.87125
≥1 USD $136.87125
≥10 USD $132.3084
≥100 USD $118.62175
Inventory: 1134
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
Series HiPerFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Resistance 33MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 300V
Technology MOSFET (Metal Oxide)
Current Rating 90A
Pin Count 3
Number of Elements 1
Power Dissipation-Max 560W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 560W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 33m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 10000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V
Rise Time 55 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 300V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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