IXFX80N60P3
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 600V 80A 0.07Ohm PolarP3 Power MOSFET
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Buying Options
Total Price: USD $15.62
Unit Price: USD $15.62
≥1 USD $15.62
≥10 USD $12.64325
≥100 USD $11.89936
≥500 USD $10.783828
Inventory: 245
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 30 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series HiPerFET?, Polar3?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3kW
Case Connection DRAIN
Turn On Delay Time 48 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 13100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Rise Time 25 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 87 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.07Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 2000 mJ
Dimensions
Height 21.34mm
Length 16.13mm
Width 5.21mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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