IXFX66N50Q2
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 66A PLUS247
PDF
/
Inventory: 5193
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HiPerFET?
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 735W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 735W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9125pF @ 25V
Current - Continuous Drain (Id) @ 25°C 66A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 66A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.08Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 264A
Avalanche Energy Rating (Eas) 4000 mJ
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
IXFX66N50Q2+price,IXFX66N50Q2+datasheet,IXFX66N50Q2+in stock,buy+IXFX66N50Q2,finder+IXFX66N50Q2,IXFX66N50Q2+tutorials,IXFX66N50Q2+download