IXFX64N50Q3
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 64A PLUS247
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Buying Options
Total Price: USD $22.79
Unit Price: USD $22.789421
≥1 USD $22.789421
≥10 USD $21.499449
≥100 USD $20.282503
≥500 USD $19.134432
≥1000 USD $18.051346
Inventory: 1116
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 30 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series HiPerFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 1000W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1kW
Case Connection DRAIN
Turn On Delay Time 36 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 6.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 6950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 64A Tc
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V
Rise Time 250 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 64A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.085Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 160A
Avalanche Energy Rating (Eas) 4000 mJ
Dimensions
Height 21.34mm
Length 16.13mm
Width 5.21mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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