IXFX64N50P
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 64A PLUS247
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Buying Options
Total Price: USD $14.77
Unit Price: USD $14.7668
≥1 USD $14.7668
≥10 USD $12.1163
≥100 USD $11.7382
≥500 USD $11.35915
≥1000 USD $10.9801
≥3000 USD $9.84485
Inventory: 91
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 2500 mJ
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 64A
Turn-Off Delay Time 85 ns
Fall Time (Typ) 22 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 25 ns
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Current - Continuous Drain (Id) @ 25°C 64A Tc
Input Capacitance (Ciss) (Max) @ Vds 8700pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 8mA
Rds On (Max) @ Id, Vgs 85m Ω @ 32A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 830W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 830W Tc
Number of Elements 1
Pin Count 3
Current Rating 64A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 500V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Resistance 85MOhm
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series HiPerFET?, PolarHT?
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 30 Weeks
Alternative Model
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