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IXFX55N50

IXYS
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 500V 55A PLUS247
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Buying Options
Total Price: USD $6.57
Unit Price: USD $6.574
≥1 USD $6.574
≥10 USD $5.3941
≥100 USD $5.22595
≥500 USD $5.05685
≥1000 USD $4.8887
≥3000 USD $4.3833
Inventory: 9206
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Dimensions

Height 25.66mm

Technical

Max Junction Temperature (Tj) 150°C
Pulsed Drain Current-Max (IDM) 220A
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 4.5V
Continuous Drain Current (ID) 55A
Turn-Off Delay Time 120 ns
Fall Time (Typ) 45 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 60 ns
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Rds On (Max) @ Id, Vgs 80m Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 45 ns
Case Connection DRAIN
Power Dissipation 520W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 625W Tc
Number of Channels 1
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 55A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 500V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Resistance 80MOhm
Number of Terminations 3
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Series HiPerFET?
Published 2002
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 8 Weeks

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