Max Junction Temperature (Tj) 150°C
Pulsed Drain Current-Max (IDM) 220A
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 55A
Turn-Off Delay Time 120 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Current - Continuous Drain (Id) @ 25°C 55A Tc
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Rds On (Max) @ Id, Vgs 80m Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 625W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Operating Temperature -55°C~150°C TJ