DS Breakdown Voltage-Min 75V
Drain-source On Resistance-Max 0.0022Ohm
Continuous Drain Current (ID) 520A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 75V
Gate Charge (Qg) (Max) @ Vgs 545nC @ 10V
Current - Continuous Drain (Id) @ 25°C 520A Tc
Input Capacitance (Ciss) (Max) @ Vds 41000pF @ 25V
Vgs(th) (Max) @ Id 5V @ 8mA
Rds On (Max) @ Id, Vgs 2.2m Ω @ 100A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1250W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series GigaMOS?, TrenchT2?
Operating Temperature -55°C~175°C TJ