IXFX34N80
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 34A PLUS247
PDF
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Buying Options
Total Price: USD $14.1
Unit Price: USD $14.10187
≥1 USD $14.10187
≥10 USD $13.30365
≥100 USD $12.55061
≥500 USD $11.8402
≥1000 USD $11.17
≥3000 USD $10.53774
Inventory: 3978
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series HiPerFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Resistance 240MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 34A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 560W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 560W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 7500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 34A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 45 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 34A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 800V
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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