IXFX32N80Q3
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
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Buying Options
Total Price: USD $25.45
Unit Price: USD $25.445816
≥1 USD $25.445816
≥10 USD $24.005492
≥100 USD $22.646685
≥500 USD $21.364793
≥1000 USD $20.155477
Inventory: 1086
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 30 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series HiPerFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 1000W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1kW
Case Connection DRAIN
Turn On Delay Time 38 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 6.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 6940pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 300ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.27Ohm
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 3000 mJ
Dimensions
Height 21.34mm
Length 16.13mm
Width 5.21mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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