IXFX180N085
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 85V 180A PLUS247
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package PLUS247?-3
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series HiPerFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 560W Tc
Element Configuration Single
Power Dissipation 560W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 320nC @ 10V
Rise Time 90ns
Drain to Source Voltage (Vdss) 85V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 180A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 85V
Input Capacitance 9.1nF
Drain to Source Resistance 7mOhm
Rds On Max 7 mΩ
Compliance
RoHS Status RoHS Compliant
Alternative Model
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