IXFX140N30P
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 300V 140A PLUS 247
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Buying Options
Total Price: USD $15.59
Unit Price: USD $15.59159
≥1 USD $15.59159
≥10 USD $14.70905
≥100 USD $13.87646
≥500 USD $13.091
≥1000 USD $12.35
≥3000 USD $11.65094
Inventory: 4295
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 30 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series HiPerFET?, PolarP2?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 1040W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.04kW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 70A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 14800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 140A Tc
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 140A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.024Ohm
Drain to Source Breakdown Voltage 300V
Avalanche Energy Rating (Eas) 5000 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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