Avalanche Energy Rating (Eas) 1000 mJ
Pulsed Drain Current-Max (IDM) 150A
Drain to Source Breakdown Voltage 300V
Drain-source On Resistance-Max 0.066Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 52A
Turn-Off Delay Time 60 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Current - Continuous Drain (Id) @ 25°C 52A Tc
Input Capacitance (Ciss) (Max) @ Vds 3490pF @ 25V
Vgs(th) (Max) @ Id 5V @ 4mA
Rds On (Max) @ Id, Vgs 66m Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 400W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series PolarHT? HiPerFET?
Operating Temperature -55°C~150°C TJ