IXFV26N50PS
RoHS
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Package PLUS-220SMD
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
IXYS SEMICONDUCTOR IXFV26N50PS MOSFET Transistor, PolarFET, N Channel, 26 A, 500 V, 230 mohm, 10 V, 5.5 V
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PLUS-220SMD
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series HiPerFET?, PolarHT?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 26A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 400W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 400W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 230m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 58 ns
Continuous Drain Current (ID) 26A
Threshold Voltage 5.5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 78A
Avalanche Energy Rating (Eas) 1000 mJ
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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