IXFV18N90P
RoHS
/
Package TO-220-3, Short Tab
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 900V 18A PLUS220
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3, Short Tab
Number of Pins 220
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series HiPerFET?, PolarP2?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 540W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 540W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5230pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 97nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.6Ohm
Drain to Source Breakdown Voltage 900V
Pulsed Drain Current-Max (IDM) 36A
Avalanche Energy Rating (Eas) 800 mJ
Compliance
RoHS Status RoHS Compliant
Alternative Model
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