IXFV14N80PS
RoHS
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Package PLUS-220SMD
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 14A PLUS220-S
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PLUS-220SMD
Number of Pins 220
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series HiPerFET?, PolarHT?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 400W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 400W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 720m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 14A
Drain-source On Resistance-Max 0.72Ohm
Drain to Source Breakdown Voltage 800V
Avalanche Energy Rating (Eas) 500 mJ
Compliance
RoHS Status RoHS Compliant
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