IXFV12N80PS
RoHS
/
Package PLUS-220SMD
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
IXYS SEMICONDUCTOR IXFV12N80PSPower MOSFET, N Channel, 12 A, 800 V, 850 mohm, 10 V, 5 V
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Technical Details
Technical
Power Dissipation-Max 360W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 850m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Rise Time 26ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 70 ns
Reverse Recovery Time 250 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.85Ohm
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 36A
Dual Supply Voltage 800V
Avalanche Energy Rating (Eas) 800 mJ
Nominal Vgs 5 V
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Termination SMD/SMT
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Series HiPerFET?, PolarHT?
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Physical
Transistor Element Material SILICON
Number of Pins 220
Package / Case PLUS-220SMD
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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