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IXFT88N30P

IXYS
RoHS
RoHS RoHS compliant
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 300V 88A TO268
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Technical

Avalanche Energy Rating (Eas) 2000 mJ
DS Breakdown Voltage-Min 300V
Pulsed Drain Current-Max (IDM) 220A
Drain-source On Resistance-Max 0.04Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 88A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 300V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Current - Continuous Drain (Id) @ 25°C 88A Tc
Input Capacitance (Ciss) (Max) @ Vds 6300pF @ 25V
Vgs(th) (Max) @ Id 5V @ 4mA
Rds On (Max) @ Id, Vgs 40m Ω @ 44A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 600W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 600W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series HiPerFET?, PolarP2?
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 26 Weeks

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