Avalanche Energy Rating (Eas) 2000 mJ
DS Breakdown Voltage-Min 300V
Pulsed Drain Current-Max (IDM) 220A
Drain-source On Resistance-Max 0.04Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 88A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 300V
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Current - Continuous Drain (Id) @ 25°C 88A Tc
Input Capacitance (Ciss) (Max) @ Vds 6300pF @ 25V
Vgs(th) (Max) @ Id 5V @ 4mA
Rds On (Max) @ Id, Vgs 40m Ω @ 44A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 600W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HiPerFET?, PolarP2?
Operating Temperature -55°C~150°C TJ