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IXFT80N085

IXYS
RoHS
RoHS RoHS compliant
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET MOSFET, INTR DIODE 85V, 80A
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Avalanche Energy Rating (Eas) 2500 mJ
Pulsed Drain Current-Max (IDM) 320A
Drain to Source Breakdown Voltage 85V
Drain-source On Resistance-Max 0.009Ohm
Drain Current-Max (Abs) (ID) 85A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 80A
Turn-Off Delay Time 95 ns
Fall Time (Typ) 31 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 75ns
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V
Vgs(th) (Max) @ Id 4V @ 4mA
Rds On (Max) @ Id, Vgs 9m Ω @ 40A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 300W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series HiPerFET?
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount

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