IXFT52N30Q
RoHS
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Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 300V 52A 3-Pin(2+Tab) TO-268
PDF
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Buying Options
Total Price: USD $26.85
Unit Price: USD $26.84795
≥1 USD $26.84795
≥10 USD $22.02955
≥100 USD $21.3408
≥500 USD $20.653
≥1000 USD $19.96425
Inventory: 576
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series HiPerFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 60MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 300V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 52A
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 360W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360W
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 60m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 52A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 60 ns
Pulsed Drain Current-Max (IDM) 208A
Drain to Source Breakdown Voltage 300V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 52A
Turn-Off Delay Time 80 ns
Fall Time (Typ) 25 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Alternative Model
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