IXFT50N60P3
RoHS 
RoHS compliant
RoHS compliantPackage TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET
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Buying Options
Total Price: USD $8.82
Unit Price: USD $8.82471
≥1 USD $8.82471
≥10 USD $8.3252
≥100 USD $7.85396
≥500 USD $7.4094
≥1000 USD $6.99
≥3000 USD $6.59434
Inventory: 6379
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Series HiPerFET?, Polar3?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code unknown
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1040W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.04kW
Case Connection DRAIN
Turn On Delay Time 31 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 145m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 6300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 94nC @ 10V
Rise Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.145Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 125A
Avalanche Energy Rating (Eas) 1000 mJ
Dimensions
Height 5.1mm
Length 16.05mm
Width 14mm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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