IXFT20N80Q
RoHS
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Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 800V 20A 3-Pin(2+Tab) TO-268
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Pulsed Drain Current-Max (IDM) 80A
Drain to Source Breakdown Voltage 800V
Drain-source On Resistance-Max 0.42Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 74 ns
Fall Time (Typ) 14 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 27ns
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Rds On (Max) @ Id, Vgs 420m Ω @ 10A, 10V
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 360W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 360W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 4
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series HiPerFET?
Published 2002
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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