Avalanche Energy Rating (Eas) 1000 mJ
Pulsed Drain Current-Max (IDM) 45A
Drain to Source Breakdown Voltage 1kV
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 15A
Turn-Off Delay Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Input Capacitance (Ciss) (Max) @ Vds 3250pF @ 25V
Vgs(th) (Max) @ Id 6.5V @ 4mA
Rds On (Max) @ Id, Vgs 1.05 Ω @ 7.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 690W Tc
Reach Compliance Code unknown
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ