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IXFT13N100

IXYS
RoHS
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Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 1KV 12.5A 3-Pin(2+Tab) TO-268
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Technical

Pulsed Drain Current-Max (IDM) 50A
Drain to Source Breakdown Voltage 1kV
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 12.5A
Turn-Off Delay Time 62 ns
Fall Time (Typ) 32 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Rise Time 33ns
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Rds On (Max) @ Id, Vgs 900m Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 300W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 13A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 1kV
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Matte Tin (Sn)
Resistance 900mOhm
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series HiPerFET?
Published 2000
Packaging Tube

Physical

Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Mount Surface Mount

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