IXFT10N100
RoHS 
RoHS compliant
RoHS compliantPackage TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 1KV 10A 3-Pin(2+Tab) TO-268
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HiPerFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pulsed Drain Current-Max (IDM) 40A
Drain to Source Breakdown Voltage 1kV
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 10A
Turn-Off Delay Time 62 ns
Fall Time (Typ) 32 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Rise Time 33ns
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Rds On (Max) @ Id, Vgs 1.2 Ω @ 5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 300W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSSO-G2
Pin Count 4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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