IXFR80N50P
RoHS 
RoHS compliant
RoHS compliantPackage ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 45A ISOPLUS247
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Buying Options
Total Price: USD $18.87
Unit Price: USD $18.866276
≥1 USD $18.866276
≥10 USD $17.798372
≥100 USD $16.790915
≥500 USD $15.840497
≥1000 USD $14.943854
Inventory: 3946
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247?
Number of Pins 247
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series HiPerFET?, PolarHT?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 72MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 80A
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 360W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 360W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 72m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 12700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 45A Tc
Gate Charge (Qg) (Max) @ Vgs 197nC @ 10V
Rise Time 27ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 45A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 3500 mJ
Isolation Voltage 2.5kV
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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