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IXFR64N60Q3

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 42A ISOPLUS247
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Buying Options
Total Price: USD $33.55
Unit Price: USD $33.5456
≥1 USD $33.5456
≥10 USD $29.88744
≥100 USD $26.233856
Inventory: 70
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 30 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series HiPerFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 568W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 568W
Case Connection ISOLATED
Turn On Delay Time 45 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 104m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 6.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 9930pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Rise Time 300ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 42A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.104Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 250A
Avalanche Energy Rating (Eas) 3000 mJ

Dimensions

Height 21.34mm
Length 16.13mm
Width 5.21mm

Compliance

RoHS Status ROHS3 Compliant

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