Avalanche Energy Rating (Eas) 3500 mJ
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 36A
Turn-Off Delay Time 79 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 25V
Vgs(th) (Max) @ Id 5V @ 8mA
Rds On (Max) @ Id, Vgs 105m Ω @ 32A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 320W Tc
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HiPerFET?, PolarHT?
Operating Temperature -55°C~150°C TJ