IXFR58N20
RoHS 
RoHS compliant
RoHS compliantPackage ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 50A ISOPLUS247
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 1000 mJ
DS Breakdown Voltage-Min 200V
Pulsed Drain Current-Max (IDM) 232A
Drain-source On Resistance-Max 0.04Ohm
Continuous Drain Current (ID) 50A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Vgs(th) (Max) @ Id 4V @ 4mA
Rds On (Max) @ Id, Vgs 40m Ω @ 29A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 300W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series HiPerFET?
Published 2003
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case ISOPLUS247?
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 26 Weeks
Alternative Model
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