IXFR34N80
RoHS
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Package ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 28A ISOPLUS247
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247?
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Series HiPerFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 28A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 416W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 400W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 7500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 28A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 45ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.24Ohm
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 600A
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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