FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 1500 mJ
DS Breakdown Voltage-Min 500V
Pulsed Drain Current-Max (IDM) 120A
Drain-source On Resistance-Max 0.15Ohm
Drain Current-Max (Abs) (ID) 30A
Polarity/Channel Type N-CHANNEL
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form THROUGH-HOLE
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)