IXFR20N100P
RoHS 
RoHS compliant
RoHS compliantPackage ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 1KV 11A 3-Pin(3+Tab) ISOPLUS 247
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247?
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series HiPerFET?, PolarP2?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature UL RECOGNIZED, AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 230W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 230W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 640m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 7300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Gate Charge (Qg) (Max) @ Vgs 126nC @ 10V
Rise Time 37 ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 45 ns
Turn-Off Delay Time 56 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.64Ohm
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 50A
Avalanche Energy Rating (Eas) 500 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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