Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Subcategory FET General Purpose Power
Terminal Form THROUGH-HOLE
Reach Compliance Code compliant
Operating Temperature (Max) 150°C
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 10A
Drain-source On Resistance-Max 1.2Ohm
Pulsed Drain Current-Max (IDM) 45A
DS Breakdown Voltage-Min 1000V
Avalanche Energy Rating (Eas) 1000 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 400W