Avalanche Energy Rating (Eas) 5000 mJ
Drain to Source Breakdown Voltage 300V
Drain-source On Resistance-Max 0.026Ohm
Drain Current-Max (Abs) (ID) 70A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 82A
Turn-Off Delay Time 100 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 185nC @ 10V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Input Capacitance (Ciss) (Max) @ Vds 14800pF @ 25V
Vgs(th) (Max) @ Id 5V @ 8mA
Rds On (Max) @ Id, Vgs 26m Ω @ 70A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HiPerFET?, PolarP2?
Operating Temperature -55°C~150°C TJ