IXFR12N100
RoHS
/
Package ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 10A ISOPLUS247
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247?
Transistor Element Material SILICON
Technical
Packaging Tube
Series HiPerFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 1kV
Max Power Dissipation 250W
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 12A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.1 Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Drain to Source Voltage (Vdss) 1000V
Continuous Drain Current (ID) 10A
Pulsed Drain Current-Max (IDM) 48A
DS Breakdown Voltage-Min 1000V
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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