Drain Current-Max (Abs) (ID) 8A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 8A
Turn-Off Delay Time 29 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 500V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Input Capacitance (Ciss) (Max) @ Vds 705pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1.5mA
Rds On (Max) @ Id, Vgs 800m Ω @ 4A, 10V
Element Configuration Single
Power Dissipation-Max 180W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HiPerFET?, Polar3?
Operating Temperature -55°C~150°C TJ