IXFP7N80PM
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 3.5A TO-220
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 300 mJ
Drain to Source Breakdown Voltage 800V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 3.5A
Turn-Off Delay Time 55 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 1890pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 1.44 Ω @ 3.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Power Dissipation 50W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 50W Tc
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series HiPerFET?, PolarHT?
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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