Pulsed Drain Current-Max (IDM) 18A
Drain to Source Breakdown Voltage 800V
Drain Current-Max (Abs) (ID) 7A
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 7A
Turn-Off Delay Time 55 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Input Capacitance (Ciss) (Max) @ Vds 1890pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 1.44 Ω @ 3.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 200W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Pure Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HiPerFET?, PolarHT?
Operating Temperature -55°C~150°C TJ