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IXFP7N80P

IXYS
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 800V 7A TO-220
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Buying Options
Total Price: USD $4.49
Unit Price: USD $4.488
≥1 USD $4.488
≥10 USD $3.557136
≥100 USD $3.048936
≥500 USD $2.710206
≥1000 USD $2.320613
≥3000 USD $2.185102
Inventory: 351
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Dimensions

Width 4.83mm
Length 10.66mm
Height 9.15mm

Technical

Pulsed Drain Current-Max (IDM) 18A
Drain to Source Breakdown Voltage 800V
Drain Current-Max (Abs) (ID) 7A
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 7A
Turn-Off Delay Time 55 ns
Fall Time (Typ) 24 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 32 ns
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Input Capacitance (Ciss) (Max) @ Vds 1890pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 1.44 Ω @ 3.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 28 ns
Case Connection DRAIN
Power Dissipation 200W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 200W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Pure Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Series HiPerFET?, PolarHT?
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 26 Weeks

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