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IXFP7N60P3

IXYS
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 7A TO-220
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Technical

Avalanche Energy Rating (Eas) 400 mJ
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 16A
Drain Current-Max (Abs) (ID) 7A
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 7A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 13.3nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7A Tc
Input Capacitance (Ciss) (Max) @ Vds 705pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 1.15 Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 180W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HiPerFET?
Published 2013
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 24 Weeks

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