IXFP5N100P
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 1000V 5A TO-220
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Buying Options
Total Price: USD $0.39
Unit Price: USD $0.3876
≥1 USD $0.3876
≥10 USD $0.31825
≥100 USD $0.3078
≥500 USD $0.2983
≥1000 USD $0.28785
≥3000 USD $0.2584
Inventory: 7068
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 300 mJ
Drain to Source Breakdown Voltage 1kV
Drain Current-Max (Abs) (ID) 5A
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 5A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Gate Charge (Qg) (Max) @ Vgs 33.4nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Input Capacitance (Ciss) (Max) @ Vds 1830pF @ 25V
Vgs(th) (Max) @ Id 6V @ 250μA
Rds On (Max) @ Id, Vgs 2.8 Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 250W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 250W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series HiPerFET?, PolarP2?
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 26 Weeks
Alternative Model
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