IXFP4N60P3
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 4A TO-220AB
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Buying Options
Total Price: USD $9.98
Unit Price: USD $9.9769
≥1 USD $9.9769
≥10 USD $8.1871
≥100 USD $7.9306
≥500 USD $7.67505
≥1000 USD $7.4195
Inventory: 1234
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Dimensions
Width 4.83mm
Length 10.66mm
Height 16mm
Technical
Avalanche Energy Rating (Eas) 200 mJ
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 8A
Drain Current-Max (Abs) (ID) 4A
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 4A
Turn-Off Delay Time 24 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Input Capacitance (Ciss) (Max) @ Vds 365pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 2.2 Ω @ 2A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 15 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 114W Tc
Number of Elements 1
Pin Count 3
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HiPerFET?, Polar3?
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Surface Mount, Through Hole
Supply Chain
Factory Lead Time 24 Weeks
Alternative Model
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