IXFP36N20X3
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
200V/36A ULTRA JUNCTION X3-CLASS
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Buying Options
Total Price: USD $3.96
Unit Price: USD $3.96
≥1 USD $3.96
≥10 USD $3.140544
≥100 USD $2.69192
≥500 USD $2.39279
≥1000 USD $2.048825
≥3000 USD $1.929189
Inventory: 260
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 19 Weeks
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 176W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 4.5V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds 1425pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 36A
Drain-source On Resistance-Max 0.045Ohm
Pulsed Drain Current-Max (IDM) 50A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 300 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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