Avalanche Energy Rating (Eas) 700 mJ
DS Breakdown Voltage-Min 600V
Drain-source On Resistance-Max 0.54Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 43 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Input Capacitance (Ciss) (Max) @ Vds 1480pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 540m Ω @ 7A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 327W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HiPerFET?, Polar3?
Operating Temperature -55°C~150°C TJ