Avalanche Energy Rating (Eas) 900 mJ
Pulsed Drain Current-Max (IDM) 42A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.55Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 70 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Rds On (Max) @ Id, Vgs 550m Ω @ 7A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HiPerFET?, PolarHT?
Operating Temperature -55°C~150°C TJ