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IXFP14N60P

IXYS
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 14A TO-220
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Buying Options
Total Price: USD $4.19
Unit Price: USD $4.18665
≥1 USD $4.18665
≥10 USD $3.4352
≥100 USD $3.32785
≥500 USD $3.2205
≥1000 USD $3.11315
Inventory: 1158
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Technical

Avalanche Energy Rating (Eas) 900 mJ
Pulsed Drain Current-Max (IDM) 42A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.55Ohm
Gate to Source Voltage (Vgs) 30V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 70 ns
Fall Time (Typ) 26 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 27 ns
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Rds On (Max) @ Id, Vgs 550m Ω @ 7A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Power Dissipation 300W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 14A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 600V
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series HiPerFET?, PolarHT?
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 26 Weeks

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