IXFN80N50Q3
RoHS 
RoHS compliant
RoHS compliantPackage SOT-227-4, miniBLOC
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 63A SOT-227
PDF
/
Buying Options
Total Price: USD $66.09
Unit Price: USD $66.0877
≥1 USD $66.0877
≥10 USD $64.0224
≥100 USD $61.9571
≥500 USD $59.8918
≥1000 USD $53.6959
Inventory: 362
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 30 Weeks
Physical
Mount Chassis Mount, Panel, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series HiPerFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 780W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 780W
Case Connection ISOLATED
Turn On Delay Time 30 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 10000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 63A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 250 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 63A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.065Ohm
Drain to Source Breakdown Voltage 500V
Avalanche Energy Rating (Eas) 5000 mJ
Dimensions
Height 9.6mm
Length 38.23mm
Width 25.07mm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
IXFN80N50Q3+price,IXFN80N50Q3+datasheet,IXFN80N50Q3+in stock,buy+IXFN80N50Q3,finder+IXFN80N50Q3,IXFN80N50Q3+tutorials,IXFN80N50Q3+download