Avalanche Energy Rating (Eas) 3500 mJ
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 50A
Turn-Off Delay Time 79 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 25V
Vgs(th) (Max) @ Id 5V @ 8mA
Rds On (Max) @ Id, Vgs 96m Ω @ 500mA, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 700W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form UNSPECIFIED
Technology MOSFET (Metal Oxide)
Additional Feature UL RECOGNIZED, AVALANCHE RATED
Terminal Finish Nickel (Ni)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ