Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 625W Tc
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 52A Tc
Gate Charge (Qg) (Max) @ Vgs 186nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 52A
Drain Current-Max (Abs) (ID) 50A
Drain-source On Resistance-Max 0.085Ohm
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 2500 mJ