IXFN48N55
RoHS
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Package SOT-227-4, miniBLOC
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 550V 48A SOT-227B
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Technical Details
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series HiPerFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 600W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 8900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 48A Tc
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Drain to Source Voltage (Vdss) 550V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 48A
Drain-source On Resistance-Max 0.11Ohm
Pulsed Drain Current-Max (IDM) 192A
DS Breakdown Voltage-Min 550V
Avalanche Energy Rating (Eas) 3000 mJ
Compliance
RoHS Status RoHS Compliant
Alternative Model
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