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IXFN36N60

IXYS
RoHS
RoHS RoHS compliant
Package SOT-227-4, miniBLOC
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 36A SOT-227B
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Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1996
Series HiPerFET?
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4
Terminal Finish Nickel (Ni)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 36A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 520W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 520W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 325nC @ 10V
Rise Time 45ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) 36A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.18Ohm
Drain to Source Breakdown Voltage 600V

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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