Pulsed Drain Current-Max (IDM) 96A
Drain to Source Breakdown Voltage 1kV
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 24A
Reverse Recovery Time 250 ns
Turn-Off Delay Time 75 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000V
Gate Charge (Qg) (Max) @ Vgs 267nC @ 10V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Input Capacitance (Ciss) (Max) @ Vds 8700pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 8mA
Rds On (Max) @ Id, Vgs 390m Ω @ 12A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 568W Tc
Terminal Form UNSPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED, UL RECOGNIZED
Terminal Finish Nickel (Ni)
Moisture Sensitivity Level (MSL) Not Applicable
Operating Temperature -55°C~150°C TJ